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| LED - Chip 25.02.2008 Radiation Infrared Type Point Source Technology AlGaAs/AlGaAs ELC-740-29-20 rev. 07 Electrodes N (cathode) up typ. dimensions (m) 180 typ. thickness 180 O50 +5 -2 150 ( 25) m 360 cathode gold alloy, 1.5 m anode 560 PS-08 gold alloy, 0.5 m Maximum Ratings Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward current (DC) Peak forward current tP 50 s, tP/T = 1/2 Symbol IF IFM Min Typ Max 35 70 Unit mA mA Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward voltage Reverse voltage Radiant power1 Peak wavelength Spectral bandwidth at 50% 1) Symbol VF VR e P 0.5 Min Typ 2.2 Max 2.5 Unit V V IF = 20 mA IR = 100 A IF = 20 mA IF = 20 mA IF = 20 mA 5 0.5 730 0.9 740 30 750 mW nm nm Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type ELC-740-29-20 Lot N e(typ) [mW] VF(typ) [V] Quantity We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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